Memory Characterization

Siyacon Technologies delivers cutting-edge memory characterization solutions for next-generation semiconductor designs, specializing in performance optimization, power analysis, and reliability validation of SRAM, DRAM, and emerging non-volatile memory technologies. Our advanced testing methodology enables precise evaluation of access timing, read/write margins, and data retention across extreme temperature ranges (-40°C to 150°C) and voltage conditions. Utilizing automated probe systems and custom test architectures, we provide silicon-verified memory models with industry-leading correlation accuracy for 3nm/2nm nodes.

For AI/ML applications, we offer specialized characterization of in-memory compute architectures, including conductance profiling of RRAM arrays and neuromorphic synapse emulation. Automotive clients benefit from our AEC-Q100 qualified testing flow featuring accelerated aging studies and radiation-hardened memory validation.

  • 1

    Expertise

    • Good experience in Characterization of multiple libraries for TSMC and Samsung
    • Libraries created for multiple PVTs
    • Delivered multiple libraries at nodes ranging from 180n to N5
    • CAD Flow development for Skill/Tcl/Perl
  • 2

    Technology Node

    • TSMC : N3 N5 N7 12n 16n 28n 40n 65n
    • SAMSUNG : N4 N6 N8
    • INTEL : 3n 10n 14n 22n 45n 180n
    • GF : 14n 22n
  • 3

    Function

    • Standard Cell Library
    • Logic gates of different functionalities
    • Flip flops & Power Cells​
  • 4

    Tools and Languages

    • Synopsys – Silicon Smart
    • Cadence – Liberate
    • Siemens – Solido