Siyacon Technologies delivers cutting-edge memory characterization solutions for next-generation semiconductor designs, specializing in performance optimization, power analysis, and reliability validation of SRAM, DRAM, and emerging non-volatile memory technologies. Our advanced testing methodology enables precise evaluation of access timing, read/write margins, and data retention across extreme temperature ranges (-40°C to 150°C) and voltage conditions. Utilizing automated probe systems and custom test architectures, we provide silicon-verified memory models with industry-leading correlation accuracy for 3nm/2nm nodes.
For AI/ML applications, we offer specialized characterization of in-memory compute architectures, including conductance profiling of RRAM arrays and neuromorphic synapse emulation. Automotive clients benefit from our AEC-Q100 qualified testing flow featuring accelerated aging studies and radiation-hardened memory validation.

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Expertise
- Good experience in Characterization of multiple libraries for TSMC and Samsung
- Libraries created for multiple PVTs
- Delivered multiple libraries at nodes ranging from 180n to N5
- CAD Flow development for Skill/Tcl/Perl
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Technology Node
- TSMC : N3 N5 N7 12n 16n 28n 40n 65n
- SAMSUNG : N4 N6 N8
- INTEL : 3n 10n 14n 22n 45n 180n
- GF : 14n 22n
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3
Function
- Standard Cell Library
- Logic gates of different functionalities
- Flip flops & Power Cells
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4
Tools and Languages
- Synopsys – Silicon Smart
- Cadence – Liberate
- Siemens – Solido