Siyacon Technologies delivers complete standard characterization solutions for semiconductor devices across all technology nodes, from mature processes to cutting-edge 3nm/2nm designs. Our comprehensive testing methodology validates critical device parameters through precise DC characterization (IV/CV curves, leakage current analysis, threshold voltage extraction), rigorous AC performance evaluation (propagation delay, setup/hold timing, dynamic power profiling), and exhaustive reliability testing (BTI, HCI, electromigration).
We employ foundry-certified measurement flows using high-precision equipment capable of < 1μV/1pA resolution to ensure silicon-accurate results.For production-ready validation, we perform full PVT corner analysis across temperature ranges (-40°C to 150°C) and supply voltages, complemented by Monte Carlo simulations to quantify process variations.

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1
Expertise
- Good experience in Characterization of multiple libraries for TSMC and Samsung
- Libraries created for multiple PVTs
- Delivered multiple libraries at nodes ranging from 180n to N5
- CAD Flow development for Skill/Tcl/Perl
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2
Technology Node
- TSMC : N3 N5 N7 12n 16n 28n 40n65n
- SAMSUNG : N4 N6 N8
- INTEL : 3n 10n 14n 22n 45n 180n
- GF : 14n 22n
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3
Function
- Standard Cell Library
- Logic gates of different functionalities
- Flip flops & Power Cells
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4
Tools and Languages
- Synopsys – Silicon Smart
- Cadence – Liberate
- Siemens – Solido