Standard Characterization

Siyacon Technologies delivers complete standard characterization solutions for semiconductor devices across all technology nodes, from mature processes to cutting-edge 3nm/2nm designs. Our comprehensive testing methodology validates critical device parameters through precise DC characterization (IV/CV curves, leakage current analysis, threshold voltage extraction), rigorous AC performance evaluation (propagation delay, setup/hold timing, dynamic power profiling), and exhaustive reliability testing (BTI, HCI, electromigration).

We employ foundry-certified measurement flows using high-precision equipment capable of < 1μV/1pA resolution to ensure silicon-accurate results.For production-ready validation, we perform full PVT corner analysis across temperature ranges (-40°C to 150°C) and supply voltages, complemented by Monte Carlo simulations to quantify process variations.

  • 1

    Expertise

    • Good experience in Characterization of multiple libraries for TSMC and Samsung
    • Libraries created for multiple PVTs
    • Delivered multiple libraries at nodes ranging from 180n to N5
    • CAD Flow development for Skill/Tcl/Perl
  • 2

    Technology Node

    • TSMC : N3 N5 N7 12n 16n 28n 40n65n
    • SAMSUNG : N4 N6 N8
    • INTEL : 3n 10n 14n 22n 45n 180n
    • GF : 14n 22n
  • 3

    Function

    • Standard Cell Library
    • Logic gates of different functionalities
    • Flip flops & Power Cells​
  • 4

    Tools and Languages

    • Synopsys – Silicon Smart
    • Cadence – Liberate
    • Siemens – Solido